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Transphorm TP65H480G4JSG-TR
In Stock: 9414
MOQ: 1
5 Price Tiers
- Mfr.Part # :TP65H480G4JSG-TR
- Manufacturer :Transphorm
- Dasenic # :TP65H480G4JSG-TR-DS
- Datasheet : TP65H480G4JSG-TR Datasheet PDF
- Description : GANFET N-CH 650V 3.6A 3PQFN
- Package :-
- Unit Price: $3.0600Total: $3.06
| Quantity | Unit Price | You Save |
|---|---|---|
| 1-1 | $3.0600 | - |
| 2-10 | $2.1150 | 30.9% save |
| 11-100 | $1.5390 | 49.7% save |
| 101-500 | $1.2960 | 57.6% save |
| 501-1000 | $1.2510 | 59.1% save |
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Transphorm TP65H480G4JSG-TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Technology:GaNFET (Cascode Gallium Nitride FET)
Supplier Device Package:3-PQFN (5x6)
Power Dissipation ( Max):13.2W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:3.6A (Tc)
Rds On ( Max) @ Id, Vgs:560mOhm @ 3.4A, 8V
Vgs(th) ( Max) @ Id:2.8V @ 500µA
Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 8 V
Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):8V
Vgs ( Max):±18V
MSL Rating:3 (168 Hours,30°C/60%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H480G4JSG-TR provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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Ratings and Reviews
Great Product
John D.
Excellent product quality and fast shipping service. Will definitely purchase again!
Good Experience
Sarah M.
Smooth transaction process and responsive customer support. Highly recommended!
Satisfied
Mike R.
Accurate product description and arrived earlier than expected.
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