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  • Transphorm TP65H480G4JSG-TR

    GANFET N-CH 650V 3.6A 3PQFN
  • part number has RoHS
  • Mfr.Part # :TP65H480G4JSG-TR
  • Manufacturer :Transphorm
  • Dasenic # :TP65H480G4JSG-TR-DS
  • Datasheet :pdf download TP65H480G4JSG-TR Datasheet
  • Description : GANFET N-CH 650V 3.6A 3PQFN
  • Package :-
  • Quantity :
    Unit Price : $ 3.06Total : $ 3.06
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
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  • Payment :
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In Stock: 9414
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
1 +$ 3.0600$ 3.06
10 +$ 2.1150$ 21.15
100 +$ 1.5390$ 153.90
500 +$ 1.2960$ 648.00
1000 +$ 1.2510$ 1251.00

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Transphorm TP65H480G4JSG-TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Technology:GaNFET (Cascode Gallium Nitride FET)
Supplier Device Package:3-PQFN (5x6)
Power Dissipation ( Max):13.2W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:3.6A (Tc)
Rds On ( Max) @ Id, Vgs:560mOhm @ 3.4A, 8V
Vgs(th) ( Max) @ Id:2.8V @ 500µA
Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 8 V
Input Capacitance ( Ciss) ( Max) @ Vds:760 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):8V
Vgs ( Max):±18V
MSL Rating:3 (168 Hours,30°C/60%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H480G4JSG-TR provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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