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1 : $6.1920
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Transphorm TP65H150G4PS
GAN FET N-CH 650V TO-220
- Mfr.Part # :TP65H150G4PS
- Manufacturer :Transphorm
- Dasenic # :TP65H150G4PS-DS
- Datasheet :
TP65H150G4PS Datasheet
- Description : GAN FET N-CH 650V TO-220
- Package :-
- Quantity :Unit Price : $ 6.192Total : $ 6.19
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 8238
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
Quantity | Unit Price | Total |
1 + | $ 6.1920 | $ 6.19 |
50 + | $ 3.5730 | $ 178.65 |
100 + | $ 3.3120 | $ 331.20 |
500 + | $ 3.0870 | $ 1543.50 |
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Transphorm TP65H150G4PS technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-
Mounting Type:-
Package / Case:-
Technology:-
Supplier Device Package:-
Power Dissipation ( Max):-
F E T Type:-
F E T Feature:-
Drain to Source Voltage ( Vdss):-
Current - Continuous Drain ( Id) @ 25° C:-
Rds On ( Max) @ Id, Vgs:-
Vgs(th) ( Max) @ Id:-
Gate Charge ( Qg) ( Max) @ Vgs:-
Input Capacitance ( Ciss) ( Max) @ Vds:-
Drive Voltage ( Max Rds On, Min Rds On):-
Vgs ( Max):-
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H150G4PS provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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