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1 : $5.2470
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Transphorm TP65H150G4LSG-TR
650 V 13 A GAN FET
- Mfr.Part # :TP65H150G4LSG-TR
- Manufacturer :Transphorm
- Dasenic # :TP65H150G4LSG-TR-DS
- Datasheet :
TP65H150G4LSG-TR Datasheet
- Description : 650 V 13 A GAN FET
- Package :-
- Quantity :Unit Price : $ 5.247Total : $ 5.25
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 8346
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
Quantity | Unit Price | Total |
1 + | $ 5.2470 | $ 5.25 |
10 + | $ 3.5100 | $ 35.10 |
100 + | $ 5.2470 | $ 524.70 |
500 + | $ 2.1048 | $ 1052.40 |
1000 + | $ 2.0250 | $ 2025.00 |
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Transphorm TP65H150G4LSG-TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:2-PowerTSFN
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:2-PQFN (8x8)
Power Dissipation ( Max):52W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:13A (Tc)
Rds On ( Max) @ Id, Vgs:180mOhm @ 8.5A, 10V
Vgs(th) ( Max) @ Id:4.8V @ 500µA
Gate Charge ( Qg) ( Max) @ Vgs:8 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:598 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
US ECCN:EAR99
HTS US:8541.29.0095
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H150G4LSG-TR provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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