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Transphorm TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
Manufacturer # :TP65H035WS
Manufacturer :Transphorm
Dasenic # :TP65H035WS-DS
Datasheet :
TP65H035WS Datasheet
TP65H035WS DatasheetCustomer # :
Description : GANFET N-CH 650V 46.5A TO247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 17.6130 | $ 17.61 |
| 30+ | $ 11.6856 | $ 350.57 |
| 120+ | $ 17.6130 | $ 2113.56 |
In Stock: 1794
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 17.613
Total :$ 17.61
Delivery :
Payment :
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TP65H035WS information
Transphorm TP65H035WS technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):156W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:46.5A (Tc)
- Rds On ( Max) @ Id, Vgs:41mOhm @ 30A, 10V
- Vgs(th) ( Max) @ Id:4.8V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:36 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):12V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H035WS provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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