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1 : $16.0200
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Transphorm TP65H035G4WSQA
650 V 46.5 GAN FET
- Mfr.Part # :TP65H035G4WSQA
- Manufacturer :Transphorm
- Dasenic # :TP65H035G4WSQA-DS
- Datasheet :
TP65H035G4WSQA Datasheet
- Description : 650 V 46.5 GAN FET
- Package :-
- Quantity :Unit Price : $ 16.02Total : $ 16.02
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 1824
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
Quantity | Unit Price | Total |
1 + | $ 16.0200 | $ 16.02 |
30 + | $ 10.5480 | $ 316.44 |
120 + | $ 10.2420 | $ 1229.04 |
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Transphorm TP65H035G4WSQA technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):187W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:47.2A (Tc)
Rds On ( Max) @ Id, Vgs:41mOhm @ 30A, 10V
Vgs(th) ( Max) @ Id:4.8V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs:22 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 400 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
MSL Rating:3 (168 Hours,30°C/60%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
TP65H035G4WSQA provided by Transphorm
Founded in 2007, Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 1000 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
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