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Toshiba GT30J121(Q)
Manufacturer # :GT30J121(Q)
Manufacturer :Toshiba
Dasenic # :326825-DS
Datasheet : GT30J121(Q) Datasheet
Sample :
Customer # :
Description : IGBT 600V 30A 170W TO3PN TO-3P-3, SC-65-3 Tube
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In Stock: 9411
MOQ :1 PCS
Packaging :TO-3P-3, SC-65-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.853
Total :$ 2.85
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:170 W
- Supplier Device Package:TO-3P(N)
- Current - Collector ( Ic) ( Max):30 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- Vce(on) ( Max) @ Vge, Ic:2.45V @ 15V, 30A
- Current - Collector Pulsed ( Icm):60 A
- Switching Energy:1mJ (on), 800µJ (off)
- Td (on/off) @ 25° C:90ns/300ns
- Test Condition:300V, 30A, 24Ohm, 15V
- Base Product Number:GT30J121