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Toshiba Semiconductor and Storage GT30J121(Q)
Manufacturer # :GT30J121(Q)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :GT30J121(Q)-DS
Datasheet : GT30J121(Q) Datasheet
Customer # :
Description : IGBT 600V 30A 170W TO3PN
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In Stock: 1700
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9915
Total :$ 0.99
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GT30J121(Q) information
Toshiba Semiconductor and Storage GT30J121(Q) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
- Product Status:Active
- Operating Temperature:-
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Input Type:Standard
- Power - Max:170 W
- Supplier Device Package:TO-3P(N)
- Reverse Recovery Time (trr):-
- Current - Collector ( Ic) ( Max):30 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:-
- Vce(on) ( Max) @ Vge, Ic:2.45V @ 15V, 30A
- Current - Collector Pulsed ( Icm):60 A
- Switching Energy:1mJ (on), 800µJ (off)
- Gate Charge:-
- Td (on/off) @ 25° C:90ns/300ns
- Test Condition:300V, 30A, 24Ohm, 15V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GT30J121(Q) provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.
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