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Tagore Technology TR0329M
Manufacturer # :TR0329M
Manufacturer :Tagore Technology
Dasenic # :TR0329M-DS
Datasheet : TR0329M Datasheet
Customer # :
Description : 2.4-4.2GHZ ULTRA LNA, 2-STAGE BY
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In Stock: 1600
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.796
Total :$ 5.80
Delivery :
Payment :
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TR0329M information
Tagore Technology TR0329M technical specifications, attributes, parameters.
- Category:RF and Wireless/RF Amplifiers
- Product Status:Active
- Package / Case:20-WFQFN Exposed Pad
- Frequency:3.3GHz ~ 4GHz
- Gain:34dB
- P1d B:20dBm
- Voltage- Supply:5V
- Current- Supply:90mA
- R F Type:4G/5G, Cellular
- Noise Figure:0.5dB
- Test Frequency:3.3GHz ~ 4GHz
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
TR0329M provided by Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. Our advanced proprietary, technologies and devices significantly reduce complexity, size, weight and power consumption of system solutions at an aggressive price point - delivering dramatically improved power conversion Figure of Merit compared to Silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications from 5G cellular infrastructure to consumer, automotive and defense and security. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability.
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