Name: TA9410E
Brand: Tagore Technology
SKU: DS-6129726
Price: 63.108 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $63.1080

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Tagore Technology TA9410E

PA RF GAN PWR 25W .03-4GHZ 50V

Manufacturer # :TA9410E

Manufacturer :Tagore Technology

Dasenic # :TA9410E-DS

Datasheet :

TA9410E Datasheet

Customer # :

Customer #

Description : PA RF GAN PWR 25W .03-4GHZ 50V

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Quantity	Unit Price	Total
1+	$ 63.1080	$ 63.11
100+	$ 54.6210	$ 5462.1
500+	$ 50.7420	$ 25371

In Stock: 1587

MOQ :1 PCS

Packaging :-

Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 63.108

Total :$ 63.11

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Payment :

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TA9410E information

Tagore Technology TA9410E technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF
Product Status:Active
Voltage - Rated:50 V
Package / Case:8-VDFN Exposed Pad
Frequency:20MHz ~ 3GHz
Current Rating ( Amps):30A
Supplier Device Package:8-QFN (5x6)
Power - Output:25W
Transistor Type:GaN HEMT
Gain:17dB
Voltage - Test:-
Noise Figure:-
Current - Test:-
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8542.33.0001
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Tagore Technology TA9410E
Datasheet:
TA9410E,

Tagore Technology TA9410E Environmental and export classification status description

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Delivering Time
For in-stock parts, orders are estimated to ship out in 1-3 days. Dasenic ships orders once a day at about 6pm except Sunday. Once shipped, estimated delivery time depends on the below carriers you chose.
DHL	DHL Express, 3-7 business days DHL eCommerce，12-22 business days
FedEx	3-7 business days
UPS	5-7 business days

TA9410E provided by Tagore Technology

Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. Our advanced proprietary, technologies and devices significantly reduce complexity, size, weight and power consumption of system solutions at an aggressive price point - delivering dramatically improved power conversion Figure of Merit compared to Silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications from 5G cellular infrastructure to consumer, automotive and defense and security. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability.