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Tagore Technology TA9310E

In Stock: 1758
MOQ: 1
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Tagore Technology TA9310E technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF
Product Status:Active
Voltage - Rated:120 V
Package / Case:8-VDFN Exposed Pad
Frequency:30MHz ~ 4GHz
Current Rating ( Amps):-
Supplier Device Package:8-QFN (5x6)
Power - Output:20W
Transistor Type:GaN HEMT
Gain:17.5dB
Voltage - Test:32 V
Noise Figure:-
Current - Test:100 mA
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:DISC 3A001B3
HTS US:8542.33.0001
China RoHS Status:Green Symbol: Green and environmentally friendly product
TA9310E provided by Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. Our advanced proprietary, technologies and devices significantly reduce complexity, size, weight and power consumption of system solutions at an aggressive price point - delivering dramatically improved power conversion Figure of Merit compared to Silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications from 5G cellular infrastructure to consumer, automotive and defense and security. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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