Name: TA9310E
Brand: Tagore Technology
SKU: DS-6129695
Price: 99.98 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $99.9800

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Tagore Technology TA9310E

PA RF GAN PWR 20W .03-4GHZ 32V

Manufacturer # :TA9310E

Manufacturer :Tagore Technology

Dasenic # :TA9310E-DS

Datasheet :

TA9310E Datasheet

Customer # :

Customer #

Description : PA RF GAN PWR 20W .03-4GHZ 32V

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Quantity	Unit Price	Total
1+	$ 99.9800	$ 99.98
100+	$ 99.9750	$ 9997.5

In Stock: 1513

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 99.98

Total :$ 99.98

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TA9310E information

Tagore Technology TA9310E technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF
Product Status:Active
Voltage - Rated:120 V
Package / Case:8-VDFN Exposed Pad
Frequency:30MHz ~ 4GHz
Current Rating ( Amps):-
Supplier Device Package:8-QFN (5x6)
Power - Output:20W
Transistor Type:GaN HEMT
Gain:17.5dB
Voltage - Test:32 V
Noise Figure:-
Current - Test:100 mA
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:DISC 3A001B3
HTS US:8542.33.0001
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Tagore Technology TA9310E
Datasheet:
TA9310E,

Tagore Technology TA9310E Environmental and export classification status description

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Delivering Time
For in-stock parts, orders are estimated to ship out in 1-3 days. Dasenic ships orders once a day at about 6pm except Sunday. Once shipped, estimated delivery time depends on the below carriers you chose.
DHL	DHL Express, 3-7 business days DHL eCommerce，12-22 business days
FedEx	3-7 business days
UPS	5-7 business days

TA9310E provided by Tagore Technology

Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. Our advanced proprietary, technologies and devices significantly reduce complexity, size, weight and power consumption of system solutions at an aggressive price point - delivering dramatically improved power conversion Figure of Merit compared to Silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications from 5G cellular infrastructure to consumer, automotive and defense and security. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability.