Name: STGWA40H65DFB
Brand: STMicroelectronics
SKU: DS-6241221
Price: 3.348 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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STMicroelectronics STGWA40H65DFB

IGBT TRENCH 650V 80A TO247

Manufacturer # :STGWA40H65DFB

Manufacturer :STMicroelectronics

Dasenic # :STGWA40H65DFB-DS

Datasheet :

STGWA40H65DFB Datasheet

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Description : IGBT TRENCH 650V 80A TO247

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Quantity	Unit Price	Total
1+	$ 3.3480	$ 3.35
10+	$ 2.9700	$ 29.7
25+	$ 2.2500	$ 56.25
100+	$ 1.8450	$ 184.5
250+	$ 1.5570	$ 389.25

In Stock: 3012

MOQ :1 PCS

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Shipping Origin :Shenzhen or Hong Kong Warehouse

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Unit Price :$ 3.348

Total :$ 3.35

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STGWA40H65DFB information

STMicroelectronics STGWA40H65DFB technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Input Type:Standard
Power - Max:283 W
Supplier Device Package:TO-247 Long Leads
Reverse Recovery Time (trr):62 ns
Current - Collector ( Ic) ( Max):80 A
Voltage - Collector Emitter Breakdown ( Max):650 V
I G B T Type:Trench Field Stop
Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 40A
Current - Collector Pulsed ( Icm):160 A
Switching Energy:498µJ (on), 363µJ (off)
Gate Charge:210 nC
Td (on/off) @ 25° C:40ns/142ns
Test Condition:400V, 40A, 5Ohm, 15V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for STMicroelectronics STGWA40H65DFB
Datasheet:
STGWA40H65DFB,

STMicroelectronics STGWA40H65DFB Environmental and export classification status description
The STGWA40H65DFB is a 650V Gallium Nitride (GaN) high electron mobility transistor (HEMT) designed for efficient power conversion applications. Its ability to switch at high frequencies and operate at high voltages makes it suitable for a variety of applications in power electronics. Functions - High Voltage Operation: Capable of managing voltages up to 650V. - High Switching Frequency: Ideal for high-frequency applications due to low gate charge and fast switching times. - Efficiency: Provides superior efficiency in power conversion, reducing losses in both converter and inverter applications. - Thermal Performance: Designed to handle high power densities with effective thermal management. Applications - Power Supply Units: Utilized in switch-mode power supplies (SMPS) for computers, televisions, and other electronic devices. - Renewable Energy Systems: Effective for inverter applications in solar and wind power systems. - Electric Vehicles: Found in power converters for battery management and drive applications. - Industrial Equipment: Used in variable frequency drives (VFDs) and other motor control applications. - Telecommunications: Relevant for DC-DC converters and RF amplifiers. Alternative Parts Some alternative components to the STGWA40H65DFB include: - STGWA40H65DFD: A similar GaN HEMT with slightly different specifications. - Other manufacturers: Consider products from companies like Infineon, Cree (Wolfspeed), and GaN Systems which have similar GaN HEMTs available in the market (e.g., the Infineon IGBT series). Embedded Modules - STMicroelectronics Gate Drivers: Modules that can be used with the STGWA40H65DFB for efficient driving of the GaN transistor. - Evaluation Boards: STMicroelectronics offers various evaluation boards to test the performance and versatility of the STGWA40H65DFB in practical applications. --- Q&A Q1: What is the maximum voltage rating of the STGWA40H65DFB? - A1: The STGWA40H65DFB has a maximum voltage rating of 650V, making it suitable for high voltage applications. Q2: In what types of applications is the STGWA40H65DFB typically used? - A2: This device is commonly used in power supply units, renewable energy systems, electric vehicles, industrial equipment, and telecommunications. Q3: What advantages does the STGWA40H65DFB have over traditional silicon-based devices? - A3: The STGWA40H65DFB offers higher switching frequencies, improved efficiency, and better thermal performance compared to traditional silicon-based power devices. Q4: Are there specific gate drivers recommended for use with the STGWA40H65DFB? - A4: Yes, STMicroelectronics provides a range of gate drivers that are compatible with the STGWA40H65DFB to ensure optimal performance and reliability. Q5: How does the STGWA40H65DFB improve the efficiency of power converters? - A5: The low gate charge and fast switching characteristics of the STGWA40H65DFB help reduce losses during switching events, resulting in higher overall efficiency in power conversion applications.

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STGWA40H65DFB provided by STMicroelectronics

Founded in 1987, STMicroelectronics(NYSE: STM) is a global semiconductor leader delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of everyday life. ST is a leading supplier of a wide range of semiconductor products and solutions, including microcontrollers, digital and analog integrated circuits, power management devices, MEMS sensors, imaging and audio solutions, and wireless connectivity solutions.Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of the Internet of Things and 5G technology. We work with our 100,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. ST is a multinational company headquartered in Geneva, Switzerland, with operations in over 35 countries.