STMicroelectronics STGB35N35LZ-1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Input Type:Logic
Power - Max:176 W
Supplier Device Package:I2PAK (TO-262)
Reverse Recovery Time (trr):-
Current - Collector ( Ic) ( Max):40 A
Voltage - Collector Emitter Breakdown ( Max):345 V
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:1.7V @ 4.5V, 15A
Current - Collector Pulsed ( Icm):80 A
Switching Energy:-
Gate Charge:49 nC
Td (on/off) @ 25° C:1.1µs/26.5µs
Test Condition:300V, 15A, 5V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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STGB35N35LZ-1 Datasheet
