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STMicroelectronics STGB30V60DF
IGBT 600V 60A 258W D2PAK![part number has RoHS](/img/RoHS2.png)
Manufacturer # :STGB30V60DF
Manufacturer :STMicroelectronics
Dasenic # :1949E0-DS
Datasheet :
STGB30V60DF Datasheet
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Description : IGBT 600V 60A 258W D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Quantity | Unit Price | Total |
10+ | $ 2.062800 | $ 20.63 |
1000+ | $ 1.375200 | $ 1375.2 |
2000+ | $ 1.294900 | $ 2589.8 |
5000+ | $ 1.242300 | $ 6211.5 |
In Stock: 6000
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.0628
Total :$ 2.06
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:258 W
- Supplier Device Package:D²PAK
- Reverse Recovery Time (trr):53 ns
- Current - Collector ( Ic) ( Max):60 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.3V @ 15V, 30A
- Current - Collector Pulsed ( Icm):120 A
- Switching Energy:383µJ (on), 233µJ (off)
- Gate Charge:163 nC
- Td (on/off) @ 25° C:45ns/189ns
- Test Condition:400V, 30A, 10Ohm, 15V