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ROHM Semiconductor RGW60TK65DGVC11
IGBT TRNCH FIELD 650V 33A TO3PFM
Manufacturer # :RGW60TK65DGVC11
Manufacturer :ROHM Semiconductor
Dasenic # :816FEA-DS
Datasheet :
RGW60TK65DGVC11 Datasheet
RGW60TK65DGVC11 DatasheetSample :
Customer # :
Description : IGBT TRNCH FIELD 650V 33A TO3PFM TO-3PFM, SC-93-3 Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.858200 | $ 4.86 |
| 10+ | $ 2.672100 | $ 26.72 |
| 50+ | $ 2.404800 | $ 120.24 |
| 100+ | $ 1.886400 | $ 188.64 |
| 500+ | $ 1.852200 | $ 926.1 |
In Stock: 1950
MOQ :1 PCS
Packaging :TO-3PFM, SC-93-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 4.8582
Total :$ 4.86
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-3PFM, SC-93-3
- Input Type:Standard
- Power - Max:72 W
- Supplier Device Package:TO-3PFM
- Reverse Recovery Time (trr):92 ns
- Current - Collector ( Ic) ( Max):33 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:1.9V @ 15V, 30A
- Current - Collector Pulsed ( Icm):120 A
- Switching Energy:480µJ (on), 490µJ (off)
- Gate Charge:84 nC
- Td (on/off) @ 25° C:37ns/114ns
- Test Condition:400V, 30A, 10Ohm, 15V
- Base Product Number:RGW60
- Packaging:Tube
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