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ROHM Semiconductor RGW50TS65DGC11
IGBT TRNCH FIELD 650V 50A TO247N
Manufacturer # :RGW50TS65DGC11
Manufacturer :ROHM Semiconductor
Dasenic # :ADD83E-DS
Datasheet :
RGW50TS65DGC11 Datasheet
RGW50TS65DGC11 DatasheetSample :
Customer # :
Description : IGBT TRNCH FIELD 650V 50A TO247N TO-247-3 Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.584000 | $ 1.58 |
| 30+ | $ 1.272000 | $ 38.16 |
| 120+ | $ 1.046700 | $ 125.6 |
| 510+ | $ 0.945000 | $ 481.95 |
In Stock: 1946
MOQ :1 PCS
Packaging :TO-247-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.584
Total :$ 1.58
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Not For New Designs
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:156 W
- Supplier Device Package:TO-247N
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:1.9V @ 15V, 25A
- Current - Collector Pulsed ( Icm):100 A
- Switching Energy:390µJ (on), 430µJ (off)
- Gate Charge:73 nC
- Td (on/off) @ 25° C:35ns/102ns
- Test Condition:400V, 25A, 10Ohm, 15V
