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ROHM Semiconductor RGTH50TS65GC13
HIGH-SPEED SWITCHING TYPE, 650V
Manufacturer # :RGTH50TS65GC13
Manufacturer :ROHM Semiconductor
Dasenic # :84BEFE-DS
Datasheet :
RGTH50TS65GC13 Datasheet
RGTH50TS65GC13 DatasheetSample :
Customer # :
Description : HIGH-SPEED SWITCHING TYPE, 650V TO-247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.944800 | $ 2.94 |
| 10+ | $ 2.208600 | $ 22.09 |
| 50+ | $ 1.945800 | $ 97.29 |
| 100+ | $ 1.661400 | $ 166.14 |
| 500+ | $ 1.546200 | $ 773.1 |
In Stock: 3480
MOQ :1 PCS
Packaging :TO-247-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.9448
Total :$ 2.94
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:174 W
- Supplier Device Package:TO-247G
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.1V @ 15V, 25A
- Current - Collector Pulsed ( Icm):100 A
- Gate Charge:49 nC
- Td (on/off) @ 25° C:27ns/94ns
- Test Condition:400V, 25A, 10Ohm, 15V
