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ROHM Semiconductor RGSX5TS65EGC11
8S SHORT-CIRCUIT TOLERANCE, 650V
Manufacturer # :RGSX5TS65EGC11
Manufacturer :ROHM Semiconductor
Dasenic # :5F0F1F-DS
Datasheet :
RGSX5TS65EGC11 Datasheet
RGSX5TS65EGC11 DatasheetSample :
Customer # :
Description : 8S SHORT-CIRCUIT TOLERANCE, 650V TO-247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 8.254800 | $ 8.25 |
| 5+ | $ 4.073400 | $ 20.37 |
| 10+ | $ 3.550500 | $ 35.51 |
| 30+ | $ 3.202200 | $ 96.07 |
| 50+ | $ 3.132000 | $ 156.6 |
In Stock: 1950
MOQ :1 PCS
Packaging :TO-247-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 8.2548
Total :$ 8.25
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:404 W
- Supplier Device Package:TO-247N
- Reverse Recovery Time (trr):116 ns
- Current - Collector ( Ic) ( Max):114 A
- Voltage - Collector Emitter Breakdown ( Max):650 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.15V @ 15V, 75A
- Current - Collector Pulsed ( Icm):225 A
- Switching Energy:3.44mJ (on), 1.9mJ (off)
- Gate Charge:79 nC
- Td (on/off) @ 25° C:43ns/113ns
- Test Condition:400V, 75A, 10Ohm, 15V
