Rochester Electronics MC1413PG technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Obsolete
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:16-DIP (0.300", 7.62mm)
Power - Max:-
Supplier Device Package:16-PDIP
Transistor Type:7 NPN Darlington
Current - Collector ( Ic) ( Max):500mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Current - Collector Cutoff ( Max):-
D C Current Gain (h F E) ( Min) @ Ic, Vce:1000 @ 350mA, 2V
Frequency - Transition:-
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
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- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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MC1413PG Datasheet
