Onsemi FGL60N100BNTD technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Input Type:Standard
Power - Max:180 W
Supplier Device Package:TO-264-3
Reverse Recovery Time (trr):1.2 µs
Current - Collector ( Ic) ( Max):60 A
Voltage - Collector Emitter Breakdown ( Max):1000 V
I G B T Type:NPT and Trench
Vce(on) ( Max) @ Vge, Ic:2.9V @ 15V, 60A
Current - Collector Pulsed ( Icm):120 A
Switching Energy:-
Gate Charge:275 nC
Td (on/off) @ 25° C:140ns/630ns
Test Condition:600V, 60A, 51Ohm, 15V
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
China RoHS Status:Green Symbol: Green and environmentally friendly product
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FGL60N100BNTD Datasheet
