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Onsemi HGTP5N120BND
167W 21A 1200V NPT TO-220AB-3 IGBTs
Manufacturer # :HGTP5N120BND
Manufacturer :Onsemi
Dasenic # :E6D621-DS
Datasheet :
HGTP5N120BND Datasheet
HGTP5N120BND DatasheetSample :
Customer # :
Description : 167W 21A 1200V NPT TO-220AB-3 IGBTs TO-220AB-3
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| Quantity | Unit Price | Total |
| 1+ | $ 1.188000 | $ 1.19 |
In Stock: 7050
MOQ :1 PCS
Packaging :TO-220AB-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 1.188
Total :$ 1.19
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Input Type:Standard
- Power - Max:167 W
- Supplier Device Package:TO-220-3
- Reverse Recovery Time (trr):65 ns
- Current - Collector ( Ic) ( Max):21 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:2.7V @ 15V, 5A
- Current - Collector Pulsed ( Icm):40 A
- Switching Energy:450µJ (on), 390µJ (off)
- Gate Charge:53 nC
- Td (on/off) @ 25° C:22ns/160ns
- Test Condition:960V, 5A, 25Ohm, 15V
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