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Onsemi HGTP10N120BN
298W 35A 1200V NPT TO-220 IGBTs
Manufacturer # :HGTP10N120BN
Manufacturer :Onsemi
Dasenic # :4CFB3E-DS
Datasheet :
HGTP10N120BN Datasheet
HGTP10N120BN DatasheetSample :
Customer # :
Description : 298W 35A 1200V NPT TO-220 IGBTs TO-220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 7+ | $ 0.510600 | $ 3.57 |
| 7+ | $ 0.531900 | $ 3.72 |
| 10+ | $ 0.500400 | $ 5 |
| 10+ | $ 0.521300 | $ 5.21 |
In Stock: 36546
MOQ :1 PCS
Packaging :TO-220
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.5106
Total :$ 0.51
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Input Type:Standard
- Power - Max:298 W
- Supplier Device Package:TO-220-3
- Current - Collector ( Ic) ( Max):35 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:2.7V @ 15V, 10A
- Current - Collector Pulsed ( Icm):80 A
- Switching Energy:320µJ (on), 800µJ (off)
- Gate Charge:100 nC
- Td (on/off) @ 25° C:23ns/165ns
- Test Condition:960V, 10A, 10Ohm, 15V
- Base Product Number:HGTP10
- Packaging:Tube
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