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Onsemi FGA25N120FTD
IGBT 1200V 50A 313W TO3P![part number has RoHS](/img/RoHS2.png)
Manufacturer # :FGA25N120FTD
Manufacturer :Onsemi
Dasenic # :1DB482-DS
Datasheet :
FGA25N120FTD Datasheet
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Description : IGBT 1200V 50A 313W TO3P TO-3P-3, SC-65-3 Tube
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In Stock: 78
MOQ :1 PCS
Packaging :TO-3P-3, SC-65-3 Tube
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:313 W
- Supplier Device Package:TO-3P
- Reverse Recovery Time (trr):770 ns
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 25A
- Current - Collector Pulsed ( Icm):75 A
- Switching Energy:340µJ (on), 900µJ (off)
- Gate Charge:160 nC
- Td (on/off) @ 25° C:48ns/210ns
- Test Condition:600V, 25A, 15Ohm, 15V
- Base Product Number:FGA25N120