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1 : $4.2190
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IXYS Corporation IXGT30N60B2D1
IGBT 600V 70A 190W TO268
Manufacturer # :IXGT30N60B2D1
Manufacturer :IXYS Corporation
Dasenic # :E67FEF-DS
Datasheet :
IXGT30N60B2D1 Datasheet
IXGT30N60B2D1 DatasheetSample :
Customer # :
Description : IGBT 600V 70A 190W TO268 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.219000 | $ 4.22 |
| 30+ | $ 3.835400 | $ 115.06 |
In Stock: 1715
MOQ :1 PCS
Packaging :TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 4.219
Total :$ 4.22
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:1410 (3524 Metric)
- Input Type:Standard
- Power - Max:190 W
- Supplier Device Package:TO-268AA
- Reverse Recovery Time (trr):25 ns
- Current - Collector ( Ic) ( Max):70 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:PT
- Vce(on) ( Max) @ Vge, Ic:1.8V @ 15V, 24A
- Current - Collector Pulsed ( Icm):150 A
- Switching Energy:320µJ (off)
- Gate Charge:66 nC
- Td (on/off) @ 25° C:13ns/110ns
- Test Condition:400V, 24A, 5Ohm, 15V
- Series:HiPerFAST™
- Base Product Number:IXGT30
