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IXYS Corporation IXGQ28N120BD1
IGBT 1200V 50A 250W TO3P![part number has RoHS](/img/RoHS2.png)
Manufacturer # :IXGQ28N120BD1
Manufacturer :IXYS Corporation
Dasenic # :9FDBA8-DS
Datasheet :
IXGQ28N120BD1 Datasheet
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Description : IGBT 1200V 50A 250W TO3P TO-3P-3, SC-65-3 Tube
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In Stock: 1909
MOQ :1 PCS
Packaging :TO-3P-3, SC-65-3 Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:250 W
- Supplier Device Package:TO-3P
- Reverse Recovery Time (trr):40 ns
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Vce(on) ( Max) @ Vge, Ic:3.5V @ 15V, 28A
- Current - Collector Pulsed ( Icm):150 A
- Switching Energy:2mJ (off)
- Gate Charge:92 nC
- Td (on/off) @ 25° C:30ns/180ns
- Test Condition:960V, 28A, 5Ohm, 15V
- Base Product Number:IXGQ28