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IXYS Corporation IXGM25N100A
IGBT 1000V 50A 200W TO247AE
IXGM25N100A Datasheet| Quantity | Unit Price | Total |
| 1+ | $ 6.135800 | $ 6.14 |
| 20+ | $ 5.578000 | $ 111.56 |
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Type:Standard
- Power - Max:200 W
- Supplier Device Package:TO-204AE
- Reverse Recovery Time (trr):200 ns
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1000 V
- Vce(on) ( Max) @ Vge, Ic:4V @ 15V, 25A
- Current - Collector Pulsed ( Icm):100 A
- Switching Energy:5mJ (off)
- Gate Charge:180 nC
- Td (on/off) @ 25° C:100ns/500ns
- Test Condition:800V, 25A, 33Ohm, 15V
- Base Product Number:IXGM25
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