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Integra Technologies IGN1011L70
GAN, RF POWER TRANSISTOR, L-BAND
IGN1011L70 Datasheet| Quantity | Unit Price | Total |
| 1+ | $ 370.000000 | $ 370 |
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IGN1011L70 information
Integra Technologies IGN1011L70 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/RF FETs, MOSFETs
- Product Status:Active
- Voltage - Rated:120 V
- Frequency:1.03GHz ~ 1.09GHz
- Supplier Device Package:PL32A2
- Power - Output:80W
- Transistor Type:GaN HEMT
- Gain:22dB
- Voltage - Test:50 V
- Current - Test:22 mA
- Packaging:PL32A2
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