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Integra Technologies IGN1011L1200

Name: IGN1011L1200
Brand: Integra Technologies
SKU: IGN1011L1200-DS
Price: 1523.5800 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 1508

MOQ: 1

1 Price Tiers

Mfr.Part # :IGN1011L1200
Manufacturer :Integra Technologies
Dasenic # :IGN1011L1200-DS
Datasheet : IGN1011L1200 Datasheet PDF
Description : GAN, RF POWER TRANSISTOR, L-BAND
Package :-
Unit Price: $1523.5800
Total: $1523.58

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1-1	$1,523.5800	-

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Integra Technologies IGN1011L1200 technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF

Product Status:Active

Voltage - Rated:180 V

Package / Case:PL84A1

Frequency:1.03GHz ~ 1.09GHz

Current Rating ( Amps):-

Supplier Device Package:PL84A1

Power - Output:1250W

Transistor Type:HEMT

Gain:16.8dB

Voltage - Test:50 V

Noise Figure:-

Current - Test:160 mA

EU RoHS Status:ROHS3 Compliant

MSL Rating:1 (Unlimited, 30°C/85%RH)

US ECCN:EAR99

HTS US:8541.29.0075

REACH Status:REACH is not affected

China RoHS Status:Green Symbol: Green and environmentally friendly product

IGN1011L1200 provided by Integra Technologies

Integra Technologies engineers and manufactures the most advanced RF power solutions for the highest performance radar systems around the world. Our products include RF Power Transistors GaN,RF Power Transistors Silicon,50 Ohm RF Power Transistors,RF Power Amplifier Pallets,etc. We focus on high performance markets providing off the shelf, semi-custom, and custom solutions for aerospace and defense radars, air traffic control, weather radars, avionics, data links, electronic warfare, as well as medical and industrial applications. Not only do we support your current UHF through X-band radar system applications with a full selection of the most advanced high-power pre-matched and fully matched RF power transistors and integrated RF power amplifier modules, we're also committed to supporting your legacy programs and custom design requirements.