Infineon Technologies SKB10N60AATMA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Type:Standard
Power - Max:92 W
Supplier Device Package:PG-TO263-3-2
Reverse Recovery Time (trr):220 ns
Current - Collector ( Ic) ( Max):20 A
Voltage - Collector Emitter Breakdown ( Max):600 V
I G B T Type:NPT
Vce(on) ( Max) @ Vge, Ic:2.4V @ 15V, 10A
Current - Collector Pulsed ( Icm):40 A
Switching Energy:320µJ
Gate Charge:52 nC
Td (on/off) @ 25° C:28ns/178ns
Test Condition:400V, 10A, 25Ohm, 15V
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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SKB10N60AATMA1 Datasheet
