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Infineon Technologies SGB07N120ATMA1
IGBT 1200V 16.5A 125W TO263-3-2
Manufacturer # :SGB07N120ATMA1
Manufacturer :Infineon Technologies
Dasenic # :961596-DS
Datasheet :
SGB07N120ATMA1 Datasheet
SGB07N120ATMA1 DatasheetSample :
Customer # :
Description : IGBT 1200V 16.5A 125W TO263-3-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 6.411800 | $ 64.12 |
| 1000+ | $ 4.274500 | $ 4274.5 |
| 2000+ | $ 4.024900 | $ 8049.8 |
| 5000+ | $ 3.861500 | $ 19307.5 |
In Stock: 2749
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 6.4118
Total :$ 6.41
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Type:Standard
- Power - Max:125 W
- Supplier Device Package:PG-TO263-3-2
- Current - Collector ( Ic) ( Max):16.5 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:3.6V @ 15V, 8A
- Current - Collector Pulsed ( Icm):27 A
- Switching Energy:1mJ
- Gate Charge:70 nC
- Td (on/off) @ 25° C:27ns/440ns
- Test Condition:800V, 8A, 47Ohm, 15V
