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Infineon Technologies IRG7CH35UEF
IGBT 1200V ULTRA FAST DIE
Manufacturer # :IRG7CH35UEF
Manufacturer :Infineon Technologies
Dasenic # :5DA509-DS
Datasheet :
IRG7CH35UEF Datasheet
IRG7CH35UEF DatasheetSample :
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Description : IGBT 1200V ULTRA FAST DIE Die
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| Quantity | Unit Price | Total |
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In Stock: 68
MOQ :1 PCS
Packaging :Die
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 175°C (TJ)
- Package / Case:Die
- Input Type:Standard
- Supplier Device Package:Die
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Vce(on) ( Max) @ Vge, Ic:1.6V @ 15V, 5A
- Gate Charge:85 nC
- Td (on/off) @ 25° C:30ns/160ns
- Test Condition:600V, 20A, 10Ohm, 15V
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