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Infineon Technologies IKA03N120H2XKSA1
IGBT 1200V 8.2A 29W TO220-3![part number has RoHS](/img/RoHS2.png)
Manufacturer # :IKA03N120H2XKSA1
Manufacturer :Infineon Technologies
Dasenic # :4C0239-DS
Datasheet :
IKA03N120H2XKSA1 Datasheet
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Description : IGBT 1200V 8.2A 29W TO220-3 TO-220-3 Full Pack
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In Stock: 90
MOQ :1 PCS
Packaging :TO-220-3 Full Pack
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Input Type:Standard
- Power - Max:29 W
- Supplier Device Package:PG-TO220-3-31
- Reverse Recovery Time (trr):52 ns
- Current - Collector ( Ic) ( Max):8.2 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Vce(on) ( Max) @ Vge, Ic:2.8V @ 15V, 3A
- Current - Collector Pulsed ( Icm):9 A
- Switching Energy:290µJ
- Gate Charge:8.6 nC
- Td (on/off) @ 25° C:9.2ns/281ns
- Test Condition:800V, 3A, 82Ohm, 15V