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Infineon Technologies AIHD10N60RFATMA1
IC DISCRETE 600V TO252-3
Manufacturer # :AIHD10N60RFATMA1
Manufacturer :Infineon Technologies
Dasenic # :46A96A-DS
Datasheet :
AIHD10N60RFATMA1 Datasheet
AIHD10N60RFATMA1 DatasheetSample :
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Description : IC DISCRETE 600V TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR)
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| Quantity | Unit Price | Total |
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In Stock: 536
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Insulated Gate Bipolar Transistors (IGBTs)
- Product Status:Active
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Input Type:Standard
- Power - Max:150 W
- Supplier Device Package:PG-TO252-3-313
- Current - Collector ( Ic) ( Max):20 A
- Voltage - Collector Emitter Breakdown ( Max):600 V
- I G B T Type:Trench Field Stop
- Vce(on) ( Max) @ Vge, Ic:2.5V @ 15V, 10A
- Current - Collector Pulsed ( Icm):30 A
- Switching Energy:190µJ (on), 160µJ (off)
- Gate Charge:64 nC
- Td (on/off) @ 25° C:12ns/168ns
- Test Condition:400V, 10A, 26Ohm, 15V
- Base Product Number:AIHD10
