Name: G5S12016B
Brand: Global Power Technology-GPT
SKU: DS-5763521
Price: 27.32 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $27.3200

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Global Power Technology-GPT G5S12016B

SIC SCHOTTKY DIODE 1200V 16A 3-P

Manufacturer # :G5S12016B

Manufacturer :Global Power Technology-GPT

Dasenic # :G5S12016B-DS

Datasheet :

G5S12016B Datasheet

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Description : SIC SCHOTTKY DIODE 1200V 16A 3-P

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Quantity	Unit Price	Total
1+	$ 27.3200	$ 27.32
10+	$ 24.0660	$ 240.66

In Stock: 2601

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 27.32

Total :$ 27.32

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G5S12016B information

Global Power Technology-GPT G5S12016B technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
Product Status:Active
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AB
Speed:No Recovery Time > 500mA (Io)
Diode Type:Silicon Carbide Schottky
Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 8 A
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Diode Configuration:1 Pair Common Cathode
Voltage - D C Reverse ( Vr) ( Max):1200 V
Current - Average Rectified ( Io) (per Diode):27.9A (DC)
Reverse Recovery Time (trr):0 ns
Operating Temperature - Junction:-55°C ~ 175°C
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Global Power Technology-GPT G5S12016B
Datasheet:
G5S12016B,

Global Power Technology-GPT G5S12016B Environmental and export classification status description

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Delivering Time
For in-stock parts, orders are estimated to ship out in 1-3 days. Dasenic ships orders once a day at about 6pm except Sunday. Once shipped, estimated delivery time depends on the below carriers you chose.
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UPS	5-7 business days

G5S12016B provided by Global Power Technology-GPT

Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices. Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication. As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.