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Global Power Technology-GPT G3S06508B

In Stock: 1428
MOQ: 1
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Global Power Technology-GPT G3S06508B technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
Product Status:Active
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AB
Speed:No Recovery Time > 500mA (Io)
Diode Type:Silicon Carbide Schottky
Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 8 A
Current - Reverse Leakage @ Vr:50 µA @ 650 V
Diode Configuration:1 Pair Common Cathode
Voltage - D C Reverse ( Vr) ( Max):650 V
Current - Average Rectified ( Io) (per Diode):14A (DC)
Reverse Recovery Time (trr):0 ns
Operating Temperature - Junction:-55°C ~ 175°C
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
G3S06508B provided by Global Power Technology-GPT

Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices.

Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication.

As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.

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