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G3S12004B
SIC SCHOTTKY DIODE 1200V 4A 3-PIDasenic Part Number : 3B37EC-DS
Manufacturer :Global Power Technology
Manufacturer Part # : G3S12004B
Datasheet :Download
Sample :
Customer Reference :
Pricing (USD) : Prices are for reference only and aren't final sales prices.
In Stock: 1323
MOQ : 1 PCS
Packaging :TO-247-3 Tape & Box (TB) Cut Tape (CT)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 13.18
Total : $ 13.18
* Tax not included , All prices are in USD
Delivery :
Payment :
- Category:Discrete Semiconductor Devices/Diode Arrays
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiC (Silicon Carbide) Schottky
- Supplier Device Package:TO-247AB
- Speed:No Recovery Time > 500mA (Io)
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 2 A
- Current - Reverse Leakage @ Vr:50 µA @ 1200 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):8.5A (DC)
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- Packaging:Cut Tape (CT)
- Packaging:Tape & Box (TB)