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Global Power Technology-GPT G5S12010BM
SIC SCHOTTKY DIODE 1200V 10A 3-P
Manufacturer # :G5S12010BM
Manufacturer :Global Power Technology-GPT
Dasenic # :G5S12010BM-DS
Datasheet :
G5S12010BM Datasheet
G5S12010BM DatasheetCustomer # :
Description : SIC SCHOTTKY DIODE 1200V 10A 3-P
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 30+ | $ 6.4350 | $ 193.05 |
In Stock: 5940
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.435
Total :$ 6.43
Delivery :
Payment :
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G5S12010BM information
Global Power Technology-GPT G5S12010BM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247AB
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 5 A
- Current - Reverse Leakage @ Vr:50 µA @ 1200 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):19.35A (DC)
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G5S12010BM provided by Global Power Technology-GPT
Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices.
Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication.
As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.
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