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Global Power Technology G51XT

DIODE SIC 650V 1.84A SOD123FL
part number has RoHS
Manufacturer # :G51XT
Dasenic # :503027-DS
Datasheet :pdf download G51XT Datasheet
Customer # :
Description : DIODE SIC 650V 1.84A SOD123FL SOD-123F Tape & Box (TB) Cut Tape (CT)
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 0.378000$ 3.78
270+$ 0.315000$ 85.05
In Stock: 5940
MOQ :1 PCS
Packaging :SOD-123F Tape & Box (TB) Cut Tape (CT)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.378
Total :$ 0.38
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G51XT information

Product Details
of G51XT The Global Power Technology G51XT is a discrete semiconductor device, primarily categorized as a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for high-performance applications where efficient power management is critical. Functions - Switching: The G51XT functions as a high-speed switch, allowing control of power in various electronic circuits. - Amplification: It can be used to amplify electronic signals in circuit designs. - Power Management: Useful in power regulation applications to enhance energy efficiency. Applications - Power Supply Units: Commonly used in AC-DC converters and DC-DC converters. - Motor Drives: Utilized in driving motors for industrial and automotive applications. - Telecommunications: Suitable for signal amplification in communication devices. - Consumer Electronics: Implemented in various consumer electronics for energy management. Alternative Parts When looking for alternative parts to the G51XT, consider the following options which may offer similar specifications or functionalities: - Infineon IRF3205: A power MOSFET with comparable performance in switching applications. - Vishay Siliconix Si4435: Another high-performance MOSFET suitable for various applications. - ON Semiconductor NTP7403N: A versatile power MOSFET with similar voltage and current specifications. Embedded Modules Embedded systems that utilize the G51XT might include: - Microcontroller Development Boards: Often used in conjunction with microcontrollers for controlling power to various components. - Motor Control Modules: Tailored for applications requiring precise control of motors. - Power Management Systems: Integrated into systems requiring sophisticated power regulation and management. Related Q&A 1. Q: What are the key electrical characteristics of the G51XT? - A: The G51XT typically features high voltage and current ratings, low on-state resistance (RDS(on)), and fast switching speeds, making it ideal for power applications. 2. Q: In what types of circuits would I use a G51XT MOSFET? - A: You would use the G51XT in circuits like switching power supplies, DC motor drivers, signal amplification stages, and high-side/low-side switching applications. 3. Q: How does the G51XT compare to alternative power MOSFETs? - A: The G51XT is competitively rated for performance parameters like voltage, current, and thermal management. However, specific characteristics such as RDS(on) and switching speed should be compared with alternatives for the best fit in a circuit. 4. Q: What safety considerations should I keep in mind when using the G51XT? - A: Ensure proper heat dissipation, adhere to maximum ratings for voltage and current, and consider protection circuits against transients to prevent damage to the device. 5. Q: Can the G51XT be used in high-frequency applications? - A: Yes, the G51XT is capable of being used in high-frequency applications, but one should verify its characteristics over the desired frequency range to ensure optimal performance.
  • Global Power Technology G51XT technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Schottky Diodes
  • Product Status:Active
  • Mounting Type:Surface Mount
  • Package / Case:SOD-123F
  • Technology:SiC (Silicon Carbide) Schottky
  • Supplier Device Package:SOD-123FL
  • Speed:No Recovery Time > 500mA (Io)
  • Current - Average Rectified ( Io):1.84A
  • Voltage - Forward ( Vf) ( Max) @ If:1.6 V @ 1 A
  • Current - Reverse Leakage @ Vr:50 µA @ 650 V
  • Capacitance @ Vr, F:57.5pF @ 0V, 1MHz
  • Voltage - D C Reverse ( Vr) ( Max):650 V
  • Reverse Recovery Time (trr):0 ns
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Packaging:Cut Tape (CT)
  • Packaging:Tape & Box (TB)
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