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Global Power Technology-GPT G3S12010M
SIC SCHOTTKY DIODE 1200V 10A 2-P
Manufacturer # :G3S12010M
Manufacturer :Global Power Technology-GPT
Dasenic # :G3S12010M-DS
Datasheet :
G3S12010M Datasheet
G3S12010M DatasheetCustomer # :
Description : SIC SCHOTTKY DIODE 1200V 10A 2-P
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| Quantity | Unit Price | Total |
| 30+ | $ 7.9463 | $ 238.39 |
In Stock: 5940
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.9463
Total :$ 7.95
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G3S12010M information
Global Power Technology-GPT G3S12010M technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Through Hole
- Package / Case:TO-220-2 Full Pack
- Supplier Device Package:TO-220F
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):23.5A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 10 A
- Current - Reverse Leakage @ Vr:50 µA @ 1200 V
- Capacitance @ Vr, F:765pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH info available upon request
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G3S12010M provided by Global Power Technology-GPT
Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices.
Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication.
As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.
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