Name: G3S06550P
Brand: Global Power Technology-GPT
SKU: DS-5848107
Price: 15.3797 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Global Power Technology-GPT G3S06550P

SIC SCHOTTKY DIODE 650V 50A 2-PI

Manufacturer # :G3S06550P

Manufacturer :Global Power Technology-GPT

Dasenic # :G3S06550P-DS

Datasheet :

G3S06550P Datasheet

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Description : SIC SCHOTTKY DIODE 650V 50A 2-PI

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Quantity	Unit Price	Total
30+	$ 15.3797	$ 461.39

In Stock: 5940

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 15.3797

Total :$ 15.38

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G3S06550P information

Global Power Technology-GPT G3S06550P technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
Product Status:Active
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247AC
Speed:No Recovery Time > 500mA (Io)
Diode Type:Silicon Carbide Schottky
Current - Average Rectified ( Io):105A (DC)
Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 50 A
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:4400pF @ 0V, 1MHz
Voltage - D C Reverse ( Vr) ( Max):650 V
Reverse Recovery Time (trr):0 ns
Operating Temperature - Junction:-55°C ~ 175°C
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH info available upon request
US ECCN:EAR99
HTS US:8541.10.0080
EU RoHS Status:RoHS Compliant
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Global Power Technology-GPT G3S06550P
Datasheet:
G3S06550P,

Global Power Technology-GPT G3S06550P Environmental and export classification status description

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For in-stock parts, orders are estimated to ship out in 1-3 days. Dasenic ships orders once a day at about 6pm except Sunday. Once shipped, estimated delivery time depends on the below carriers you chose.
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FedEx	3-7 business days
UPS	5-7 business days

G3S06550P provided by Global Power Technology-GPT

Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices. Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication. As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.