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Global Power Technology-GPT G3S06505D

In Stock: 2257
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Global Power Technology-GPT G3S06505D technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
Product Status:Active
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263
Speed:No Recovery Time > 500mA (Io)
Diode Type:Silicon Carbide Schottky
Current - Average Rectified ( Io):22.6A (DC)
Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 5 A
Current - Reverse Leakage @ Vr:50 µA @ 650 V
Capacitance @ Vr, F:424pF @ 0V, 1MHz
Voltage - D C Reverse ( Vr) ( Max):650 V
Reverse Recovery Time (trr):0 ns
Operating Temperature - Junction:-55°C ~ 175°C
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH info available upon request
US ECCN:EAR99
HTS US:8541.10.0080
EU RoHS Status:RoHS Compliant
China RoHS Status:Green Symbol: Green and environmentally friendly product
G3S06505D provided by Global Power Technology-GPT

Global Power Technology Co., Ltd. (GPT) is one of the pioneers in the industrialization of China's silicon carbide (SiC) power devices.

Koown as the first SiC power device manufacturer in China,GPT owns a complete semiconductor fab located in Beijing.The production line is compatible with 4/6-inch wafer fabrication.

As the very first domestic SiC device R&D and production platform service company, GPT's production line covers basic core technology products, SIC molding products and multiple industrial solutions. The company's core products are represented by SiC Schottky diodes. series of silicon carbide Schottky diode products have been Put into mass production, the quality of the products can be compared with the advanced level of the same industry in the world.

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