GigaDevice Semiconductor GD25VE16CEIGR technical specifications, attributes, parameters.
Category:Integrated Circuits (ICs)/Memory Integrated Circuit
Product Status:Active
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-XFDFN Exposed Pad
Technology:FLASH - NOR
Supplier Device Package:8-USON (2x3)
Memory Size:16Mb (2M x 8)
Memory Type:Non-Volatile
Voltage - Supply:2.1V ~ 3.6V
Clock Frequency:104 MHz
Access Time:-
Memory Format:Flash
Memory Interface:SPI - Quad I/O
Write Cycle Time - Word, Page:-
EU RoHS Status:ROHS3 Compliant
MSL Rating:3 (168 Hours,30°C/60%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8542.32.0071
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
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GD25VE16CEIGR Datasheet
