General Electric GE17042BCA3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Power - Max:1250W
Supplier Device Package:-
F E T Type:2 N-Channel (Dual)
F E T Feature:Silicon Carbide (SiC)
Drain to Source Voltage ( Vdss):1700V (1.7kV)
Current - Continuous Drain ( Id) @ 25° C:425A (Tc)
Rds On ( Max) @ Id, Vgs:4.45mOhm @ 425A, 20V
Vgs(th) ( Max) @ Id:4.5V @ 160mA
Gate Charge ( Qg) ( Max) @ Vgs:18V
Input Capacitance ( Ciss) ( Max) @ Vds:29100pF @ 900V
EU RoHS Status:The vendor has not updated RoHS info
REACH Status:REACH is not defined
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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GE17042BCA3 Datasheet
