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General Electric GE12047CCA3
1200V Half-Bridge Silicon Carbide Power Module
Manufacturer # :GE12047CCA3
Manufacturer :General Electric
Dasenic # :3FA9E3-DS
Datasheet :
GE12047CCA3 Datasheet
GE12047CCA3 DatasheetSample :
Customer # :
Description : 1200V Half-Bridge Silicon Carbide Power Module Box
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2174.000000 | $ 2174 |
| 10+ | $ 2048.000000 | $ 20480 |
In Stock: 1520
MOQ :1 PCS
Packaging :Box
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2174
Total :$ 2174.00
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (Tc)
- Mounting Type:Chassis Mount
- Package / Case:Module
- Technology:Silicon Carbide (SiC)
- Power - Max:1250W
- Supplier Device Package:Module
- Configuration:2 N-Channel (Half Bridge)
- F E T Feature:Silicon Carbide (SiC)
- Drain to Source Voltage ( Vdss):1200V (1.2kV)
- Current - Continuous Drain ( Id) @ 25° C:475A
- Rds On ( Max) @ Id, Vgs:4.4mOhm @ 475A, 20V
- Vgs(th) ( Max) @ Id:4.5V @ 160mA
- Gate Charge ( Qg) ( Max) @ Vgs:1248nC @ 18V
- Input Capacitance ( Ciss) ( Max) @ Vds:29300pF @ 600V
- Series:SiC Power
- Base Product Number:GE12047
- Packaging:Box
