General Electric GE12047BCA3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (Tc)
Mounting Type:Chassis Mount
Package / Case:Module
Power - Max:1250W
Supplier Device Package:-
F E T Type:2 Independent
F E T Feature:Silicon Carbide (SiC)
Drain to Source Voltage ( Vdss):1200V (1.2kV)
Current - Continuous Drain ( Id) @ 25° C:475A
Rds On ( Max) @ Id, Vgs:4.4mOhm @ 475A, 20V
Vgs(th) ( Max) @ Id:4.5V @ 160mA
Gate Charge ( Qg) ( Max) @ Vgs:1248nC @ 18V
Input Capacitance ( Ciss) ( Max) @ Vds:29.3nF @ 600V
EU RoHS Status:The vendor has not updated the RoHS info
REACH Status:REACH is not defined
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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GE12047BCA3 Datasheet
