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Wolfspeed PXAE213708NB-V1-R0
SI LDMOS AMP 370W 2110-2170MHZ
Manufacturer # :PXAE213708NB-V1-R0
Manufacturer :Wolfspeed
Dasenic # :PXAE213708NB-V1-R0-DS
Datasheet :
PXAE213708NB-V1-R0 Datasheet
PXAE213708NB-V1-R0 DatasheetCustomer # :
Description : SI LDMOS AMP 370W 2110-2170MHZ
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 50+ | $ 105.7580 | $ 5287.9 |
| 100+ | $ 101.0750 | $ 10107.5 |
| 150+ | $ 105.7580 | $ 15863.7 |
In Stock: 1329
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 105.758
Total :$ 105.76
Delivery :
Payment :
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PXAE213708NB-V1-R0 information
Wolfspeed PXAE213708NB-V1-R0 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF
- Product Status:Active
- Voltage - Rated:65 V
- Package / Case:PG-HB2SOF-8-1
- Frequency:2.11GHz ~ 2.18GHz
- Current Rating ( Amps):10µA
- Supplier Device Package:PG-HB2SOF-8-1
- Power - Output:54W
- Transistor Type:LDMOS
- Gain:16dB
- Voltage - Test:29 V
- Noise Figure:-
- Current - Test:750 mA
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
PXAE213708NB-V1-R0 provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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