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Wolfspeed GTVA311801FA-V1-R250
GAN HEMT 50V 180W 2.7-3.1GHZ
Manufacturer # :GTVA311801FA-V1-R250
Manufacturer :Wolfspeed
Dasenic # :GTVA311801FA-V1-R250-DS
Datasheet :
GTVA311801FA-V1-R250 Datasheet
GTVA311801FA-V1-R250 DatasheetCustomer # :
Description : GAN HEMT 50V 180W 2.7-3.1GHZ
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 406.3906 | $ 4063.91 |
| 250+ | $ 338.6588 | $ 84664.7 |
In Stock: 1750
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 406.3906
Total :$ 406.39
Delivery :
Payment :
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GTVA311801FA-V1-R250 information
Wolfspeed GTVA311801FA-V1-R250 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - RF
- Product Status:Active
- Voltage - Rated:125 V
- Package / Case:H-37265J-2
- Frequency:2.7GHz ~ 3.1GHz
- Current Rating ( Amps):-
- Supplier Device Package:H-37265J-2
- Power - Output:180W
- Transistor Type:HEMT
- Gain:15dB
- Voltage - Test:50 V
- Noise Figure:-
- Current - Test:20 mA
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:DISC 3A001B3
- HTS US:8541.29.0075
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GTVA311801FA-V1-R250 provided by Wolfspeed
Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.
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