Images are for reference only.
1 : $12.3120
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
UnitedSiC UJ4C075023K3S
750V/23MOHM, SIC, CASCODE, G4, T
Manufacturer # :UJ4C075023K3S
Manufacturer :UnitedSiC
Dasenic # :UJ4C075023K3S-DS
Datasheet :
UJ4C075023K3S Datasheet
UJ4C075023K3S DatasheetCustomer # :
Description : 750V/23MOHM, SIC, CASCODE, G4, T
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 12.3120 | $ 12.31 |
| 25+ | $ 10.6920 | $ 267.3 |
| 100+ | $ 9.2340 | $ 923.4 |
| 250+ | $ 8.2530 | $ 2063.25 |
| 600+ | $ 8.2440 | $ 4946.4 |
In Stock: 5076
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 12.312
Total :$ 12.31
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
UJ4C075023K3S information
UnitedSiC UJ4C075023K3S technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):306W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):750 V
- Current - Continuous Drain ( Id) @ 25° C:66A (Tc)
- Rds On ( Max) @ Id, Vgs:29mOhm @ 40A, 12V
- Vgs(th) ( Max) @ Id:6V @ 10mA
- Gate Charge ( Qg) ( Max) @ Vgs:37.8 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1400 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):12V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
UJ4C075023K3S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
UnitedSiC Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.