Images are for reference only.

Share

1 : $1.9170

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Certifications for ISO9001
Certifications for ISO13485
Certifications for ISO45001
Certifications for ISO14001

UnitedSiC UJ3D06508TS

650V 8A SIC SCHOTTKY DIODE G3, T
part number has RoHS
Manufacturer # :UJ3D06508TS
Manufacturer :UnitedSiC
Dasenic # :UJ3D06508TS-DS
Customer # :
Description : 650V 8A SIC SCHOTTKY DIODE G3, T
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 1.9170$ 1.92
25+$ 1.6650$ 41.63
100+$ 1.4400$ 144
250+$ 1.3230$ 330.75
500+$ 1.2330$ 616.5
In Stock: 33842
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.917
Total :$ 1.92
Delivery :
dhlupsfedex
Payment :
paypalwiretransferpaypal02paypal04

Help you to save your cost and time

Strict quality inspection and Reliable package for goods

Fast Reliable delivery to save time

Provide 365 days warranty after-sales service

UJ3D06508TS information

  • UnitedSiC UJ3D06508TS technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
  • Product Status:Active
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2
  • Supplier Device Package:TO-220-2
  • Speed:No Recovery Time > 500mA (Io)
  • Diode Type:Silicon Carbide Schottky
  • Current - Average Rectified ( Io):8A (DC)
  • Voltage - Forward ( Vf) ( Max) @ If:1.7 V @ 8 A
  • Current - Reverse Leakage @ Vr:50 µA @ 650 V
  • Capacitance @ Vr, F:250pF @ 1V, 1MHz
  • Voltage - D C Reverse ( Vr) ( Max):650 V
  • Reverse Recovery Time (trr):0 ns
  • Operating Temperature - Junction:-55°C ~ 175°C
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:Vendor omitted MSL Rating information
  • REACH Status:REACH Unaffected
  • US ECCN:EAR99
  • HTS US:8541.10.0080
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
UJ3D06508TS provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support. On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications. Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
UnitedSiC Related product recommendations

We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.