Name: UJ3C120150K3S
Brand: UnitedSiC
SKU: DS-6135485
Price: 7.164 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $7.1640

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UnitedSiC UJ3C120150K3S

SICFET N-CH 1200V 18.4A TO247-3

Manufacturer # :UJ3C120150K3S

Manufacturer :UnitedSiC

Dasenic # :UJ3C120150K3S-DS

Datasheet :

UJ3C120150K3S Datasheet

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Description : SICFET N-CH 1200V 18.4A TO247-3

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Quantity	Unit Price	Total
1+	$ 7.1640	$ 7.16
25+	$ 6.2280	$ 155.7
100+	$ 7.1640	$ 716.4
250+	$ 4.9500	$ 1237.5
500+	$ 4.8038	$ 2401.9

In Stock: 3276

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 7.164

Total :$ 7.16

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UJ3C120150K3S information

UnitedSiC UJ3C120150K3S technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:SiCFET (Cascode SiCJFET)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):166.7W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:18.4A (Tc)
Rds On ( Max) @ Id, Vgs:180mOhm @ 5A, 12V
Vgs(th) ( Max) @ Id:5.5V @ 10mA
Gate Charge ( Qg) ( Max) @ Vgs:30 nC @ 15 V
Input Capacitance ( Ciss) ( Max) @ Vds:738 pF @ 100 V
Drive Voltage ( Max Rds On, Min Rds On):12V
Vgs ( Max):±25V
EU RoHS Status:ROHS3 Compliant
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for UnitedSiC UJ3C120150K3S
Datasheet:
UJ3C120150K3S,

UnitedSiC UJ3C120150K3S Environmental and export classification status description
The Diodes Incorporated UJ3C120150K3S is a silicon carbide (SiC) Schottky diode specifically designed for high efficiency and high-frequency applications. This diode features a low forward voltage drop, fast switching speed, and high-temperature performance, making it suitable for various power electronics applications. Functions: 1. Low forward voltage drop: The UJ3C120150K3S has a low forward voltage drop, which helps to minimize power losses and improve overall efficiency in power conversion systems. 2. Fast switching speed: The fast switching speed of this diode allows for rapid and efficient power switching in applications requiring high frequency operation. 3. High-temperature performance: With its silicon carbide construction, this diode can operate at elevated temperatures without sacrificing performance, making it ideal for demanding applications. Applications: 1. Power factor correction (PFC) circuits 2. Switch-mode power supplies (SMPS) 3. Solar inverters 4. Electric vehicle (EV) charging systems 5. UPS systems Alternative Components: 1. Cree Inc. C3D03060A - SiC Schottky diode 2. Infineon Technologies AG IDWC - SiC Schottky diode series 3. ON Semiconductor NCP516xx - SiC Schottky diode family Embedded Modules: The UJ3C120150K3S can be integrated into various power electronic modules and components such as: 1. DC-DC converters 2. Motor drives 3. Battery chargers 4. Power factor correction modules 5. Inverter modules Related Q&A: 1. Q: What are the advantages of using silicon carbide (SiC) Schottky diodes like the UJ3C120150K3S? A: SiC Schottky diodes offer lower forward voltage drop, higher temperature performance, and faster switching speed compared to traditional silicon diodes, leading to improved efficiency and reliability in power electronic systems. 2. Q: What is the typical junction temperature range for the UJ3C120150K3S diode? A: The UJ3C120150K3S diode can operate at junction temperatures ranging from -55°C to +175°C, making it suitable for high-temperature applications. 3. Q: How does the UJ3C120150K3S diode benefit solar inverter applications? A: The UJ3C120150K3S diode's low forward voltage drop and high-temperature performance make it ideal for use in solar inverters, where efficiency and reliability are crucial for converting solar energy into usable electricity. 4. Q: Can the UJ3C120150K3S diode be used in high-frequency power switching applications? A: Yes, the UJ3C120150K3S diode is designed for high-frequency operation, with a fast switching speed that enables efficient power switching in applications such as switch-mode power supplies and motor drives. 5. Q: Are there specific thermal management considerations for the UJ3C120150K3S diode in UPS systems? A: Yes, in UPS systems where high power densities are common, proper thermal management is essential to ensure the UJ3C120150K3S diode operates within its temperature limits for optimal performance and reliability.

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UJ3C120150K3S provided by UnitedSiC

In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support. On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications. Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.