
Images are for reference only.
1 : $47.8710
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
UnitedSiC UF3SC120016K3S
SICFET N-CH 1200V 107A TO247-3
- Mfr.Part # :UF3SC120016K3S
- Manufacturer :UnitedSiC
- Dasenic # :UF3SC120016K3S-DS
- Datasheet :
UF3SC120016K3S Datasheet
- Description : SICFET N-CH 1200V 107A TO247-3
- Package :-
- Quantity :Unit Price : $ 47.871Total : $ 47.87
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
In Stock: 4353
( MOQ : 1 PCS )Pricing (USD) : * All prices are in USD
Quantity | Unit Price | Total |
1 + | $ 47.8710 | $ 47.87 |
25 + | $ 41.5980 | $ 1039.95 |
100 + | $ 47.8710 | $ 4787.10 |
250 + | $ 33.0571 | $ 8264.28 |
Request a Quote
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
UnitedSiC UF3SC120016K3S technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:SiCFET (Cascode SiCJFET)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):517W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:107A (Tc)
Rds On ( Max) @ Id, Vgs:21mOhm @ 50A, 12V
Vgs(th) ( Max) @ Id:6V @ 10mA
Gate Charge ( Qg) ( Max) @ Vgs:218 nC @ 15 V
Input Capacitance ( Ciss) ( Max) @ Vds:7824 pF @ 800 V
Drive Voltage ( Max Rds On, Min Rds On):12V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:Vendor omitted MSL Rating information
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
UF3SC120016K3S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support.
On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications.
Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
UnitedSiC Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
UF3SC120016K3S Similar Products
Ratings and Reviews
Ratings
Please rate the product !
Please submit comments after logging into your account.