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  • UnitedSiC UF3SC065040D8S

    SICFET N-CH 650V 18A 4DFN
  • part number has RoHS
  • Mfr.Part # :UF3SC065040D8S
  • Manufacturer :UnitedSiC
  • Dasenic # :UF3SC065040D8S-DS
  • Datasheet :pdf download UF3SC065040D8S Datasheet
  • Description : SICFET N-CH 650V 18A 4DFN
  • Package :-
  • Quantity :
    Unit Price : $ 24.4976Total : $ 24.50
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
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  • Payment :
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In Stock: 42
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
10 +$ 24.4976$ 244.98
2500 +$ 13.6098$ 34024.50

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UnitedSiC UF3SC065040D8S technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-PowerTSFN
Technology:SiCFET (Cascode SiCJFET)
Supplier Device Package:4-DFN (8x8)
Power Dissipation ( Max):125W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):650 V
Current - Continuous Drain ( Id) @ 25° C:18A (Tc)
Rds On ( Max) @ Id, Vgs:58mOhm @ 20A, 12V
Vgs(th) ( Max) @ Id:6V @ 10mA
Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 12 V
Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 100 V
Drive Voltage ( Max Rds On, Min Rds On):12V
Vgs ( Max):±25V
MSL Rating:3 (168 Hours,30°C/60%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
UF3SC065040D8S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support. On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications. Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
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