Images are for reference only.

Share

1 : $24.4976

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Certifications for ISO9001
Certifications for ISO13485
Certifications for ISO45001
Certifications for ISO14001

UnitedSiC UF3SC065040D8S

SICFET N-CH 650V 18A 4DFN
part number has RoHS
Manufacturer # :UF3SC065040D8S
Manufacturer :UnitedSiC
Dasenic # :UF3SC065040D8S-DS
Customer # :
Description : SICFET N-CH 650V 18A 4DFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 24.4976$ 244.98
2500+$ 13.6098$ 34024.5
In Stock: 42
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 24.4976
Total :$ 24.50
Delivery :
dhlupsfedex
Payment :
paypalwiretransferpaypal02paypal04

Help you to save your cost and time

Strict quality inspection and Reliable package for goods

Fast Reliable delivery to save time

Provide 365 days warranty after-sales service

  • UnitedSiC UF3SC065040D8S technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-PowerTSFN
  • Technology:SiCFET (Cascode SiCJFET)
  • Supplier Device Package:4-DFN (8x8)
  • Power Dissipation ( Max):125W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):650 V
  • Current - Continuous Drain ( Id) @ 25° C:18A (Tc)
  • Rds On ( Max) @ Id, Vgs:58mOhm @ 20A, 12V
  • Vgs(th) ( Max) @ Id:6V @ 10mA
  • Gate Charge ( Qg) ( Max) @ Vgs:43 nC @ 12 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:1500 pF @ 100 V
  • Drive Voltage ( Max Rds On, Min Rds On):12V
  • Vgs ( Max):±25V
  • MSL Rating:3 (168 Hours,30°C/60%RH)
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • EU RoHS Status:RoHS Compliant
  • REACH Status:Vendor is not defined
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
UF3SC065040D8S provided by UnitedSiC
In 1999, a small team of researchers at Rutgers University founded UnitedSiC. In 2010, UnitedSiC built a pilot production cleanroom near Princeton NJ, to enhance the SiC processes to the stage where they could be directly installed in a commercial foundry. At this point, UnitedSiC became a fabless company, focusing their resources on product design, R & D and customer support. On November 3, 2021, Qorvo announced the acquisition of UnitedSiC, with UnitedSiC becoming part of Qorvo’s Infrastructure & Defense Products (IDP) business. The UnitedSiC technology, together with Qorvo’s complementary Programmable Power Management products and world-class supply chain capabilities, will enable UnitedSiC to deliver superior levels of power efficiency in the most advanced applications. Customers around the world are now using the UnitedSiC FET, JFET and Schottky diode devices in new electric vehicle (EV) chargers, AC-DC and DC-DC power supplies, solid-state circuit breakers, variable speed motor drives and solar PV inverters.
UnitedSiC Related product recommendations

We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.

Ratings and Reviews

Ratings

Please rate the product !

Please submit comments after logging into your account.